Franklin

a| 00068094

a| 1558995307

a| (OCoLC)ocm50418511

a| (OCoLC)50418511

a| (CStRLIN)CSUGA4555404-B

a| 3027172

a| (PU)3027172-penndb-Voyager

a| DLC b| eng c| DLC d| GZM d| PU

a| TK7870 b| .W53 2001

a| 621.381 2| 21

a| Wide-bandgap electronic devices : b| symposium held April 24-27, 2000, San Francisco, California, U.S.A. / c| editors, Randy J. Shul .. [and others].

a| Warrendale, Pa. : b| Materials Research Society, c| [2001]

c| ©2001

a| 1 volume (various pagings) : b| illustrations ; c| 24 cm.

a| text b| txt 2| rdacontent

a| unmediated b| n 2| rdamedia

a| volume b| nc 2| rdacarrier

a| Materials Research Society symposia proceedings

a| Symposium held April 24-27 at the 2000 MRS Spring Meeting in San Francisco, California.

a| Includes bibliographical references and indexes.

t| SiC Devices -- t| SiC And GaN High-Voltage Power Devices / r| T. Paul Chow g| 1 -- t| Investigations Of Non-Micropipe X-Ray Imaged Crystal Defects In SiC Devices / r| Philip G. Neudeck, Maria A. Kuczmarski, Michael Dudley, William M. Vetter, Haibin B. Su, Luann J. Keys, Andrew J. Trunek g| 2 -- t| PD/AIN/Si Or SiC Structure for Hydrogen Sensing Device / r| Flaminia Serina, C. Huang, G. W. Auner, R. Naik, S. Ng, L. Rimai g| 3 -- t| Comprehensive Study Of The Electrothermal Operation Of SiC Power Devices Using A Fully Coupled Physical Transport Model / r| Martin Lades, Winfried Kaindl, Gerhard Wachutka g| 5 -- t| Implanted Bipolar Technology In 4H-SiC / r| Nick G. Wright, C. M. Johnson, Anthony G. O'Neill, Alton Horsfall, Sylvie Ortolland, Kazuhiro Adachi, Andrew P. Knights, Paul G. Coleman g| 7 -- t| Isothermal I-V Characteristics Of 4H-SiC p-n Diodes With Low Series Differential Resistivity At Avalanche Breakdown / r| Konstantin V. Vassilevski, Konstantinos Zekentes, Alexander V. Zorenko, Leonid P. Romanov g| 8 -- t| III-Nitride Devices--Electronic -- t| Insulator/GaN Heterostructures Of Low Interfacial Density Of States / r| Minghwei Hong, Hock M. Ng, J. Kwo, A. Refik Kortan, Jim N. Baillargeon, K. Alex Anselm, Joe P. Mannaerts, Alfred Y. Cho, C. M. Lee, Jen Inn Chyi, T. Sheng Lay, F. Ren, C. R. Abernathy, Stephen J. Pearton g| 2 -- t| AlGaN-Based Microwave Transmit and Receive Modules / r| John C. Zolper g| 4 -- t| Polarization Induced 2DEG In MBE-Grown AlGaN/GaN HFETs: On The Origin, DC And RF Characterization / r| Ramakrishna Vetury, I. P. Smorchkova, Christopher R. Elsass, Benjamin Heying, Stacia Keller, Umesh K. Mishra g| 5 -- t| Potential Of GaN Gunn Devices For High Power Generation Above 200 GHz / r| Ridha Kamoua, Yiming Zhu, Yunji Corcoran g| 6 -- t| Temperature Dependence and Current Transport Mechanisms In Al[subscript x]Ga[subscript 1-x]N Schottky Rectifiers / r| A. P. Zhang, X. A. Cao, G. Dang, F. Ren, J. Han, J.-I. Chyi, C.-M. Lee, C.-C. Chuo, T.E. Nee g| 7 -- t| Fabrication of Enhancement-Mode GaN-Based Metal-Insulator-Semiconductor Field Effect Transistor / r| P. Chen, R. Zhang, Y. G. Zhou, S.Y. Xie, Z.Y. Luo, Z.Z. Chen, W.P. Li, S.L. Gu, Y.D. Zheng g| 9 -- t| III-Nitride Devices: Electronic and Photonic -- t| GaN pnp Bipolar Junction Transistors Operated To 250[degree]C / r| A. P. Zhang, G. Dang, F. Ren, J. Han, C. Monier, A. G. Baca, X. A. Cao, H. Cho, C. R. Abernathy, S. J. Pearton g| 2 -- t| Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors / r| C. Monier, S. J. Pearton, Albert G. Baca, P. C. Chang, L. Zhang, J. Han, R.J. Shul, F. Ren, J. LaRoche g| 3 -- t| Design And Performance Of Nitride-Based Ultraviolet LEDs / r| M. H. Crawford, J. Han, R. J. Shul, M. A. Banas, J. J. Figiel, L. Zhang g| 6 -- t| Present Status Of III-Nitride Based Photodetectors / r| Eva Monroy, Fernando Calle, Jose Luis Pau, Elias Munoz, Franck Omnes, Bernard Beaumont, Pierre Gibart g| 7 -- t| A Comparative Study Of AlGaN- And GaN-Based Lasing Structures For Near- And Deep-UV Applications / r| Sergiy Bidnyk, Jack B. Lam, Gordon G. Gainer, Brian D. Little, Yong-Hwang Kwon, Jin-Joo Song, Gary E. Bulman, Hua-Shuang Kong g| 8 -- t| Growth and Characterization of Wide-Bandgap Materials -- t| Low Temperature Lateral Epitaxial Growth Of Silicon Carbide On Silicon / r| Chacko Jacob, Juyong Chung, Moon-Hi Hong, Pirouz Pirouz, Shigehiro Nishino g| 1 -- t| SiC Epitaxial Growth On Porous SiC Substrates / r| Galyna Melnychuck, Marina Mynbaeva, Svetlana Rendakova, Vladimir Dmitriev, Stephen E. Saddow g| 2 -- t| DLTS Study Of 3C-SiC Grown On Si Using Hexamethyldisilane / r| Masashi Kato, Masaya Ichimura, Eisuke Arai, Yasuichi Masuda, Yi Chen, Shigehiro Nishino, Yutaka Tokuda g| 3 -- t| Non-Contact Characterization Of Recombination Processes In 4H-SiC / r| Kevin Matocha, T.P. Chow, R.J. Gutmann g| 4 -- t| GaN Based Quantum Dot Heterostructures / r| Michael A. Reshchikov, Jie Cui, Feng Yun, Alison Baski, Marshall I. Nathan, Hadis Morkoc g| 5 -- t| Lateral Polarity Heterostructures By Overgrowth Of Patterned Al[subscript x]Ga[subscript 1-x]N Nucleation Layers / r| Roman Dimitrov, V. Tilak, M. Murphy, W. J. Schaff, L. F. Eastman, A. P. Lima, C. Miskys, O. Ambacher, M. Stutzmann g| 6 -- t| Single Crystal Growth Of Gallium Nitride Substrates Using A High-Pressure High-Temperature Process / r| Rajiv K. Singh, Donald R. Gilbert, Francis Kelly, Robert Chodelka, Reza Abbaschian, Stephen J. Pearton, Alexander Novikov, Nikolay Patrin, John Budai|p8 -- t| Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy / r| Shulin Gu, Rong Zhang, Ling Zhang, T. F. Kuech g| 9 -- t| Improved Heteroepitaxial MBE GaN Growth With A Ga Metal Buffer Layer / r| Yihwan Kim, Sudhir G. Subramanya, Joachim Krueger, Henrik Siegle, Noad Shapiro, Robert Armitage, Henning Feick, Eicke R. Weber, Christian Kisielowski, Yi Yang, Franco Cerrina g| 10 -- t| Growth and Characterization of III-Nitrides -- t| Measurement Of Transit Time And Carrier Velocity Under High Electric Field In III-Nitride P-I-N Diodes / r| Michael Wraback, H. Shen, J. C. Carrano, T. Li, J. C. Campbell g| 1 -- t| Cathodoluminescence Of Lateral Epitaxial Overgrowth GaN: Dependencies On Excitation Conditions / r| G. S. Cargill III, Eva Campo, Lanping Yue, J. Ramer, M. Schurman, I. T. Ferguson g| 2 -- t| Photoconductivity Recombination Kinetics In GaN Films / r| Mira Misra, Theodore D. Moustakas g| 4 -- t| Effect Of Interface Manipulation For MBE Growth Of AIN On 6H-SiC / r| Koichi Naniwae, Jeff Hartman, Chris Petrich, Robert F. Davis, Robert J. Nemanich g| 6 -- t| Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates / r| John T. Wolan, Yaroslav Koshka, S. E. Saddow, Yu V. Melnik, V. Dmitriev g| 7 -- t| Real Time Observation And Characterization Of Dislocation Motion, Nitrogen Desorption And Nanopipe Formation In GaN / r| Eric A. Stach, Christian F. Kisielowski, William S. Wong, Timothy Sands, Nathan W. Cheung g| 8 -- t| 2DEGs And 2DHGs Induced By Spontaneous And Piezoelectric Polarization In AlGaN/GaN Heterostructures / r| Oliver Ambacher, Angela Link, Stefan Hackenbuchner, M. Stutzmann, Roman Dimitrov, Michael Murphy, Joe Smart, Jim R. Shealy, Bruce Green, William J. Schaff, Les F. Eastman g| 10 -- t| High Room-Temperature Hole Concentrations Above 10[superscript 19] cm[superscript -3] In Mg-Doped InGaN/GaN Superlattices / r| Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi g| 11 -- t| Wide-Bandgap Devices, Materials, and Processing -- t| Pendeo Epitaxy Of 3C-SiC On Si Substrates / r| Geoffrey E. Carter, Tsvetanka Zheleva, Galyna Melnychuck, Bruce Geil, Kenneth Jones, Stephen E. Saddow g| 3 -- t| The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes / r| You-Sang Lee, M. K. Han, Y. I. Choi g| 4 -- t| A Study Of Pt/AlN/6H-SiC MIS Structures For Device Applications / r| Margarita P. Thompson, Gregory W. Auner, Changhe Huang, James N. Hilfiker g| 5 -- t| Improved Sensitivity SiC Hydrogen Sensor / r| Claudiu Iulian Muntele, Daryush lla, Eric K. Williams, Iulia Cristina Muntele, A. Leslie Evelyn, David B. Poker, Dale K. Hensley g| 6 -- t| Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide / r| J. Senzaki, K. Fukuda, Y. Ishida, Y. Tanaka, H. Tanoue, N. Kobayashi, T. Tanaka, K. Arai g| 7 -- t| The Formation And Characterization Of Epitaxial Titanium Carbide Contacts To 4H-SiC / r| Sang-Kwon Lee, Erik Danielsson, Carl-Mikael Zetterling, Mikael Ostling, Jens-Petter Palmquist, Hans Hogberg, Ulf Jansson g| 9 -- t| Arsenic Incorporation In Gallium Nitride Grown By Metalorganic Chemical Vapor Deposition Using Dimethylhydrazine And Tertiarybutylarsenic / r| Steffen Kellermann, Kim-Man Yu, Eugene E. Haller, Edith D. Bourret-Courchesne g| 11 -- t| P-GaAs Base Regrowth For GaN HBTs And BJTs / r| Gerard Dang, A. P. Zhang, X. A. Cao, F. Ren, S. J. Pearton, H. Cho, W. S. Hobson, J. Lopata, J. M. Van Hove, J. J. Klaassen, C. J. Polley, A. M. Wowchack, P. P. Chow, D. J. King g| 13 -- t| TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer / r| Mourad Benamara, Z. Liliental-Weber, S. Kellermann, W. Swider, J. Washburn, J. H. Mazur, E. D. Bourret-Courchesne g| 14 -- t| Transient Photoresponse From Co Schottky Barriers On AlGaN / r| Reinhard Schwarz, Manfred Niehus, L. Melo, Pedro Brogueira, Svetoslav Koynov, Manfred Heuken, Dirk Meister, Bruno Karl Meyer g| 15 -- t| Comparison Of Different Substrate Pre-Treatments On The Quality Of GaN Film Growth On 6H-, 4H-, And 3C-SiC / r| Ki Hoon Lee, Moon-Hi Hong, Kasif Teker, Chacko Jacob, Pirouz Pirouz g| 16 -- t| Dislocations Produced By Indentation Deformation Of HPVE GaN Films / r| Moon-Hi Hong, Pirouz Pirouz, P. M. Tavernier, David R. Clarke g| 18 -- t| Formation And Characterization Of Oxides On GaN Surfaces / r| David Mistele, Thomas Rotter, Fritz Fedler, Harald Klausing, Olga K. Semchinova, Jens Stemmer, Jochen Aderhold, Jurgen Graul g| 20 --

t| Achievements And Characterizations Of GaN With Ga-Polarity In Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy / r| Xu-Qiang Shen, T. Ide, S. H. Cho, M. Shimizu, S. Hara, H. Okumura g| 22 -- t| Nature Of Low-Frequency Excess Noise In n-Type Gallium Nitride / r| Changfei F. Zhu, W.K. Fong, B. H. Leung, C. C. Cheng, C. Surya g| 23 -- t| Monte Carlo Based Calculation Of Transport Parameters For Wide-Bandgap Device Simulation / r| Enrico Bellotti, Maziar Farahmand, Hans-Erik Nilsson, Kevin F. Brennan, P. Paul Ruden g| 24 -- t| Design Of AlGaN/GaN Heterojunction Bipolar Transistor Structures / r| Yumin Zhang, Cheng Cai, P. Paul Ruden g| 25 -- t| Thermal Modeling Of III-Nitride Heterostructure Field Effect Transistors / r| T. Li, P. Paul Ruden, J. D. Albrecht, M. G. Ancona, R. Anholt g| 26 -- t| Long Time-Constant Trap Effects In Nitride Heterostructure Field Effect Transistors / r| Xiaozhong Dang, Peter M. Asbeck, Edward T. Yu, Karim S. Boutros, Joan M. Redwing g| 28 -- t| Short Gate Length AlGaN/GaN HEMTs / r| Oliver Breitschadel, L. Kley, H. Grabeldinger, B. Kuhn, F. Scholz, H. Schweizer g| 29 -- t| Plasma-Induced Damage And Passivation Of GaN In Electron Cyclotron Resonance Excited N[subscript 2] Plasma Source / r| Jyh-Tsung Hsieh, O. Breitschadel, M. Rittner, L. W. Fu, H. Schweizer g| 30 -- t| Ohmic Contact Formation Mechanism Of Pd-Based Contact To p-GaN / r| Dae-Woo Kim, Joon Cheol Bae, Woo Jin Kim, Hong Koo Baik, Chong Cook Kim, Jung Ho Je, Chang Hee Hong g| 31 -- t| Channeling Defects In Group-III Nitrides During Dry Etching Processes / r| Oliver Breitschadel, J. T. Hsieh, B. Kuhn, F. Scholz, H. Schweizer g| 33 -- t| Microstructure And Thermal Stability Of Transition Metal Nitrides And Borides On GaN / r| Jacek Bogdan Jasinski, E. Kiminski, Anna Piotrowska, Adam Barcz, Marcin Zielinski g| 34 -- t| Lattice Parameters And Thermal Expansion Of Important Semiconductors And Their Substrates / r| Robert R. Reeber, Kai Wang g| 35 -- t| Reactive Ion Etching Of CVD Diamond In CF[subscript 4]/O[subscript 2], O[subscript 2] and O[subscript 2]/Ar Plasmas / r| Patrick W. Leech, Geoffrey K. Reeves, Anthony S. Holland g| 36 -- t| Processing of III-Nitride Materials -- t| Device Processing For GaN High Power Electronics / r| Stephen J. Pearton, X. A. Cao, H. Cho, K. P. Lee, C. Monier, F. Ren, G. Dang, A.P. Zhang, W. Johnson, J. R. LaRoche, B. P. Gila, C. R. Abernathy, R. J. Shul, A. G. Baca, J. Han, J.-I. Chyi, J. M. Van Hove g| 1 -- t| Electric And Morphology Studies Of Ohmic Contacts On AlGaN/GaN / r| Vinayak Tilak, R. Dimitrov, M. Murphy, B. Green, J. Smart, W. J. Schaff, J. R. Shealy, L. F. Eastman g| 4 -- t| Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs / r| Randy J. Shul, L. Zhang, A. G. Baca, Christi G. Willison, J. Han, S. J. Pearton, K. P. Lee, F. Ren g| 5 -- t| Surface Disordering And Nitrogen Loss In GaN Under Ion Bombardment / r| S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, M. Toth, M. R. Phillips, H. H. Tan, G. Li, S. J. Pearton g| 9 -- t| SiC Processing -- t| The Materials Properties Of A Nickel Based Composite Contact To n-SiC For Pulsed Power Switching / r| Melanie W. Cole, P. C. Joshi, F. Ren, C. W. Hubbard, M. C. Wood, M. H. Ervin g| 2 -- t| Stable Ti/TaSi[subscript 2]/Pt Ohmic Contacts On n-Type 6H-SiC Epilayer At 600[degree]C in Air / r| Robert S. Okojie, David Spry, Jeffery Krotine, Carl Salupo, Donald R. Wheeler g| 3 -- t| High-Dose Titanium Ion Implantation Into Epitaxial Si/3C-SiC/Si Layer Systems For Electrical Contact Formation / r| Jorg K.N. Lindner, Stephanie Wenzel, Bernd Stritzker g| 4 -- t| Characterization Of n-Type Layer By S[superscript +] Ion Implantation In 4H-SiC / r| Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Sadafumi Yoshida, Masataka Hasegawa, Masahiko Ogura, Hisao Tanoue g| 6 -- t| The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs / r| Gilyong Chung, Chin-Che Tin, John Robert Williams, Kyle McDonald, M. DiVentra, S. T. Pantelides, Len C. Feldman, Robert A. Weller g| 7 -- t| Effects Of Electrode Spacing On Reactive Ion Etching Of 4H-SiC / r| Janna R. Bonds, Geoff E. Carter, Jeffrey B. Casady, James D. Scofield g| 8 -- t| Deep RIE Process For Silicon Carbide Power Electronics And MEMS / r| Glenn Beheim, Carl S. Salupo g| 9 -- t| Silicon Carbide Die Attach Scheme For 500[degree]C Operation / r| Liang-Yu Chen, Gary W. Hunter, Philip G. Neudeck g| 10.

a| Electronic apparatus and appliances v| Congresses. 0| http://id.loc.gov/authorities/subjects/sh2008102918

a| Electronic apparatus and appliances. 2| fast 0| http://id.worldcat.org/fast/906772

a| Wide gap semiconductors v| Congresses.

a| Wide gap semiconductors. 2| fast 0| http://id.worldcat.org/fast/1174923

a| Conference papers and proceedings. 2| lcgft 0| http://id.loc.gov/authorities/genreForms/gf2014026068

a| Conference papers and proceedings. 2| fast 0| http://id.worldcat.org/fast/1423772

a| Shul, R. J. 0| http://id.loc.gov/authorities/names/n96061039

a| Materials Research Society. b| Fall Meeting d| (2000 : c| San Francisco, Calif.)

a| Materials Research Society symposia proceedings ; v| v. 622. 0| http://id.loc.gov/authorities/names/n42037756

a| MARCIVE 2022

s| 9115