Wide-bandgap electronic devices [electronic resource] / edited by Randy J. Shul .. ... [et al.].

Warrendale, Pa. : Materials Research Society, 2001.
MRS proceedings ; v. 622
MRS proceedings ; v. 622
[522] p. : digital, PDF fil
Electronic apparatus and appliances -- Congresses.
Wide gap semiconductors -- Congresses.
System Details:
Mode of access: World Wide Web.
Nature of Low-Frequency Excess Noise in n-Type Gallium Nitride
Design of AlGaN/GaN Heterojunction Bipolar Transistor Structures
Short Gate Length AlGaN/GaN HEMTs
Channeling Defects in Group-III Nitrides During Dry Etching Processes
Lattice Parameters and Thermal Expansion of Important Semiconductors and Their Substrates
The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes
A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications
Hall Effect Measurements at Low Temperature of Arsenic Implanted into 4H-Silicon Carbide
Device Processing for GaN High Power Electronics
Electric and Morphology Studies of Ohmic Contacts on AlGaN/GaN
Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs
Surface Disordering and Nitrogen Loss in GaN under Ion Bombardment
Silicon Carbide Die Attach Scheme for 500°C Operation
The Materials Properties of a Nickel Based Composite Contact to n-SiC for Pulsed Power Switching
Stable Ti/TaSi2/Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600C in Air
High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation
Characterization of n-Type Layer by S+ Ion Implantation in 4H-SiC
The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs
Cathodoluminescence of Lateral Epitaxial Overgrowth GaN: Dependencies on Excitation Conditions
Comparison of Different Substrate Pre-Treatments on the Quality of GaN Film Growth on 6H-, 4H-, and 3C-SiC
Monte Carlo Based Calculation of Transport Parameters for Wide Bandgap Device Simulation
Thermal Modeling of III-Nitride Heterostructure Field Effect Transistors
Long Time-Constant Trap Effects in Nitride Heterostructure Field Effect Transistors
Pendeo Epitaxy Of 3C-SiC on Si Substrates
Plasma-Induced Damage and Passivation of GaN in Electron Cyclotron Resonance Excited N2 Plasma Source
Ohmic Contact Formation Mechanism of Pd-based Contact to p-GaN
A Comparative Study of AlGaN- and GaN-Based Lasing Structures for Near- and Deep-UV Applications
Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer
SiC Epitaxial Growth on Porous SiC Substrates
DLTS Study of 3C-SiC Grown on Si Using Hexamethyldisilane
GaN Based Quantum Dot Heterostructures
Lateral Polarity Heterostructures by Overgrowth of Patterned AlxGa1-xN Nucleation Layers
Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layer by Hydride Vapor Phase Epitaxy.
Insulator/GaN Heterostructures of Low Interfacial Density of States
Polarization Induced 2DEG in MBE Grown AlGaN/GaN HFETs: On the Origin, DC and RF Characterization
Temperature Dependence and Current Transport Mechanisms in AlxGa1-xN Schottky Rectifiers
GaN PnP Bipolar Junction Transistors Operated to 250°C
Design and Performance of Nitride-based UV LEDs
Present Status of III-Nitride Based Photodetectors
Low Temperature Lateral Epitaxial Growth of Silicon Carbide on Silicon
SiC and GaN High-Voltage Power Devices
Investigations of Non-Micropipe X-ray Imaged Crystal Defects in SiC Devices
AlGaN-Based Microwave Transmit and Receive Modules
Potential of GaN Gunn Devices for High Power Generation Above 200 GHz
Fabrication of Enhancement-Mode GaN-Based MetalInsulator-Semiconductor Field Effect Transistor
Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistor
Single Crystal Growth of Gallium Nitride Substrates Using a High Pressure High Temperature Process
Measurement of Transit Time and Carrier Velocity Under High Electric Field in III-Nitride P-I-N Diodes
2DEGs and 2DHGs Induced by Spontaneous and Piezoelectric Polarization in AlGaN/GaN Heterostructures
High Room-Temperature Hole Concentrations above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices
Photoconductivity Recombination Kinetics in GaN films
Effect of Interface Manipulation for MBE Growth of AlN on 6H-SiC
Characterization of Thin GaN Layers Deposited by Hydride Vapor Phase Epitaxy (HVPE) on 6H-SiC Substrates
TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer
Transient Photoresponse From Co Schottky Barriers on AlGaN
Dislocations Produced by Indentation Deformation of HPVE GaN Films
Arsenic Incorporation in Gallium Nitride Grown by Metalorganic Chemical Vapor Deposition using Dimethylhydrazine and Tertiarybutylarsenic
P-GaAs Base Regrowth For GaN HBTs and BJTs
Formation and Characterization of Oxides on GaN Surfaces
Achievements and Characterizations of GaN with Ga-Polarity in Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
Non-Contact Characterization of Recombination Processes in 4H-SiC
Microstructure and Thermal Stability of Transition Metal Nitrides and Borides on GaN
Reactive Ion Etching of CVD Diamond in CF4/O2, O2 and O2/Ar Plasmas
Improved Sensitivity SiC Hydrogen Sensor
The Formation and Characterization of Epitaxial Titanium Carbide Contacts to 4H-SiC
Effects of Electrode Spacing on Reactive Ion Etching of 4H-SiC
Deep RIE Process for Silicon Carbide Power Electronics and MEMS
Pd/AlN/ Si or SiC Structure for Hydrogen Sensing Device
Comprehensive Study of the Electrothermal Operation of SiC Power Devices Using a Fully Coupled Physical Transport Model
Isothermal I-V Characteristics of 4H-SiC p-n Diodes with Low Series Differential Resistivity at Avalanche Breakdown
Real Time Observation and Characterization of Dislocation Motion, Nitrogen Desorption and Nanopipe Formation in GaN.
Title from home page (viewed Apr. 15, 2008).
"Published proceedings articles from Symposium T from the 2000 MRS Spring Meeting."
Issued as part of the MRS online proceedings library.
Includes bibliographical references and index.
Shul, R. J.
Materials Research Society. Meeting (2000 : San Francisco, Calif.). Symposium T.
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Wide-bandgap electronic devices.
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