Characterization in silicon processing : editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others].

Strausser, Yale, author.
Stoneham, Massachusetts ; Greenwich, Connecticut : Butterworth-Heinemann : Manning, 1993.
1 online resource (255 p.)
1st edition
Materials characterization series.
Materials Characterization Series

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Electric conductors.
Semiconductor films.
Surface chemistry.
Electronic books.
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text file
This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.
Front Cover; Characterization in Silicon Processing; Copyright page; Table of Contents; Preface to Series; Preface; Contributors; CHAPTER 1. APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH; 1.1 Introduction; 1.2 Silicon Epitaxial Growth; 1.3 Film and Process Characterization; 1.4 Selective Growth; 1.5 Si1 - xGex Epitaxial Growth; 1.6 Si 1 - xGex Material Characterization; 1.7 Summary; Acknowledgments; References; CHAPTER 2. POLYSILICON CONDUCTORS; 2.1 Introduction; 2.2 Deposition; 2.3 Doping; 2.4 Patterning; 2.5 Subsequent Processing; References
CHAPTER 3. SILICIDES3.1 Introduction; 3.2 Formation of Suicides; 3.3 The Silicide-Silicon Interface; 3.4 Oxidation of Silicides; 3.5 Dopant Redistribution During Silicide Formation; 3.6 Stress in Silicides; 3.7 Stability of Silicides; 3.8 Summary; References; CHAPTER 4. ALUMINUM- AND COPPER-BASED CONDUCTORS; 4.1 Introduction; 4.2 Film Deposition; 4.3 Film Growth; 4.4 Encapsulation; 4.5 Reliability Concerns; References; CHAPTER 5. TUNGSTEN-BASED CONDUCTORS; 5.1 Applications for ULSI Processing; 5.2 Deposition Principles; 5.3 Blanket Tungsten Deposition; 5.4 Selective Tungsten Deposition
ReferencesCHAPTER 6. BARRIER FILMS; 6.1 Introduction; 6.2 Characteristics of Barrier Films; 6.3 Types of Barrier Films; 6.4 Processing Barrier Films; 6.5 Examples of Barrier Films; 6.6 Summary; Acknowledgments; References; APPENDIX: TECHNIQUE SUMMARIES; 1 Auger Electron Spectroscopy (AES); 2 Ballistic Electron Emission Microscopy (BEEM); 3 Capacitance-Voltage (C-V) Measurements; 4 Deep Level Transient Spectroscopy (DLTS); 5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS); 6 Electron Beam Induced Current (EBIC) Microscopy; 7 Energy-Dispersive X-Ray Spectroscopy (EDS)
8 Focused Ion Beams (FIBs)9 Fourier Transform Infrared Spectroscopy (FTIR); 10 Hall Effect Resistivity Measurements; 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS); 12 Light Microscopy; 13 Low-Energy Electron Diffraction (LEED); 14 Neutron Activation Analysis (NAA); 15 Optical Scatterometry; 16 Photoluminescence (PL); 17 Raman Spectroscopy; 18 Reflection High-Energy Electron Diffraction (RHEED); 19 Rutherford Backscattering Spectrometry (RBS); 20 Scanning Electron Microscopy (SEM); 21 Scanning Transmission Electron Microscopy (STEM)
22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)23 Sheet Resistance and the Four Point Probe; 24 Spreading Resistance Analysis (SRA); 25 Static Secondary Ion Mass Spectrometry (Static SIMS); 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling; 27 Total Reflection X-Ray Fluorescence Analysis (TXRF); 28 Transmission Electron Microscopy (TEM); 29 Variable-Angle Spectroscopic Ellipsometry (VASE); 30 X-Ray Diffraction (XRD); 31 X-Ray Fluorescence (XRF); 32 X-Ray Photoelectron Spectroscopy (XPS); Index
Description based upon print version of record.
Includes bibliographical references at the end of each chapters and index.
Description based on print version record.
Strausser, Yale, editor.
Simon, Christopher, book designer.
Blumenthal, Roc, contributor.