Franklin

Wide bandgap semiconductors [electronic resource] : growth, processing and applications / edited by Stephen J. Pearton.

Publication:
Park Ridge, N.J. : Noyes Publications, 2000.
Series:
Materials science and process technology series.
Materials science and process technology series
Format/Description:
Book
1 online resource (593 p.)
Subjects:
Semiconductors -- Design and construction.
Wide gap semiconductors.
Compound semiconductors.
Form/Genre:
Electronic books.
Language:
English
Summary:
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to sp
Contents:
Front Cover; Wide Bandgap Semiconductors: Growth, Processing and Applications; Copyright Page; Contents; Chapter 1. Doping Limits and Bandgap Engineering in Wide Gap II-VI Compounds; 1.0 INTRODUCTION; 2.0 AB INITIO CALCULATIONS OF DOPING LIMITATIONS; 3.0 THE FERMI LEVEL PINNING MODEL; 4.0 DOPING AND BAND STRUCTURE ENGINEERING; 5.0 OHMIC CONTACT TO p-ZnSe; 6.0 CONCLUSIONS; REFERENCES; Chapter 2. Epitaxial Growth of II-VI Compounds by MOVPE; 1.0 INTRODUCTION; 2.0 BINARY COMPOUNDS; 3.0 TERNARY AND QUATERNARY COMPOUNDS; 4.0 CONCLUDING REMARKS; REFERENCES
Chapter 3. Ohmic Contacts to II-VI and III-V Compound Semiconductors1.0 INTRODUCTION; 2.0 OHMIC CONTACTS TO GaAs; 3.0 OHMIC CONTACTS TO InP; 4.0 OHMIC CONTACTS TO GaN; 5.0 OHMIC CONTACTS TO ZnSe; 6.0 CONCLUSIONS; ACKNOWLEDGEMENT; REFERENCES; Chapter 4. Dry Etching of SiC; 1.0 INTRODUCTION; 2.0 REQUIREMENTS OF DRY ETCHING IN SiC DEVICE FABRICATION; 3.0 CHEMISTRY OF SiC DRY ETCHING; 4.0 METHODS FOR PLASMA-ASSISTED ETCHING OF SiC; 5.0 PROFILE AND MORPHOLOGY CONTROL WITH ECR ETCHING; 6.0 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 5. Processing of Silicon Carbide for Devices and Circuits
1.0 BACKGROUND2.0 SILICON CARBIDE DEVICE PROCESSING; 3.0 SURVEY OF SiC DEVICES; 4.0 SiC CIRCUITS AND SENSORS; 5.0 CONCLUSIONS; REFERENCES; Chapter 6. Plasma Etching of III-V Nitrides; 1.0 INTRODUCTION; 2.0. ETCH TECHNIQUES; 3.0 PLASMA CHEMISTRY; 4.0 PRESSURE; 5.0 ION ENERGY AND PLASMA DENSITY; 6.0 TEMPERATURE DEPENDENCE; 7.0 GROWTH TECHNIQUE; 8.0 ETCH PROFILE, MORPHOLOGY, AND STOICHIOMETRY; 9.0 PLASMA INDUCED DAMAGE; 10.0 PLASMA ETCH APPLICATIONS; 11.0 CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 7. Ion Implantation in Wide Bandgap Semiconductors; 1.0 INTRODUCTION
2.0 IMPLANTATION ISOLATION3.0 IMPLANTATION DOPING; 4.0 IMPURITY REDISTRIBUTION; 5.0 IMPLANTATION DAMAGE: CREATION AND REMOVAL; 6.0 DEVICE DEMONSTRATIONS; 7.0 FUTURE WORK AND CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; Chapter 8. Rare Earth Impurities in Wide Gap Semiconductors; ABSTRACT; 1.0 INTRODUCTION; 2.0 BASIC CONCEPTS; 3.0 INCORPORATION OF RE ATOMS IN WIDE GAP SEMICONDUCTORS; 4.0 RE 3+ PHOTOLUMINESCENCE; 5.0 ELECTRICAL ACTIVATION OF RE 3+ IONS; 6.0 SUMMARY; ACKNOWLEDGMENT; REFERENCES; Chapter 9. SIMS Analysis of Wide Bandgap Semiconductors; 1.0 INTRODUCTION
2.0 WIDE BANDGAP MATERIALS DISCUSSED HERE3.0 SECONDARY ION MASS SPECTROMETRY (SIMS); 4.0 SIMS ISSUES; 5.0 QUANTIFICATION; 6.0 DIAMOND; 7.0 SiC; 8.0 ZnSe; 9.0 LiNbO3 (AND LiTaO3); 10.0 GROUP III-NITRIDES; 11.0 ACKNOWLEDGMENTS; REFERENCES; Chapter 10. Hydrogen in Wide Bandgap Semiconductors; 1.0 INTRODUCTION; 2.0 HYDROGEN INCORPORATION IN WIDE BANDGAP SEMICONDUCTORS; 3.0 HYDROGEN IN GaN; 4.0 HYDROGEN IN SiC; 5.0 DIAMOND; 6.0 II-VI COMPOUNDS; CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 11. Diamond Deposition and Characterization; 1.0 INTRODUCTION; 2.0 PROPERTIES; 3.0 FABRICATION
4.0 MODIFICATION
Notes:
Description based upon print version of record.
Includes bibliographical references and index.
Contributor:
Pearton, S. J.
ISBN:
0-08-094675-5
1-59124-295-9
OCLC:
813296020
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